| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD2061 is a silicon NPN power transistor manufactured by ROHM Semiconductor. It is designed for low frequency power amplifier applications. Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a continuous collector current of 3A.
This transistor features a low collector saturation voltage of 0.3V (typical) at 2A and a collector power dissipation of up to 30W at 25°C case temperature. The wide area of safe operation makes it suitable for various power amplification tasks.
The 2SD2061 is housed in a TO-220AB package, designed for through-hole mounting. Its operating junction temperature range is -55°C to 150°C, with a storage temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 3A, and the pulse collector current is 6A.
The collector-emitter breakdown voltage (VCEO) is 60V.
The maximum power dissipation is 30W when the case temperature is 25°C, and 2.0W when the ambient temperature is 25°C.
The typical collector-emitter saturation voltage is 0.3V at an IC of 2A and IB of 0.2A.
The DC current gain (hFE) is between 100 and 320 when measured at IC=0.5A and VCE=5V.
The 2SD2061 is supplied in a TO-220AB package.
