| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1932 from JRC is a Silicon NPN Darlington Power Transistor specifically designed for power amplifier applications. This component features a high DC current gain (hFE) of 1000 minimum at 2A and 3V.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 80V and a continuous collector current (IC) of 4A. The transistor can handle a peak collector current (ICM) of 6A. Its collector power dissipation is rated at 2W when ambient temperature is 25℃ and 35W when case temperature is 25℃.
The operating temperature range for the junction is up to 150℃, with storage temperatures from -55℃ to 150℃. The 2SD1932 is suitable for through-hole mounting.
This transistor is designed for general-purpose power amplification tasks where its robust specifications can be leveraged.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 80V.
The maximum continuous collector current (IC) is 4A.
The DC current gain (hFE) is a minimum of 1000 and a maximum of 10000 under test conditions of IC= 2A and VCE= 3V.
The collector power dissipation is 2W at an ambient temperature of 25℃ and 35W at a case temperature of 25℃.
The junction temperature can operate up to 150℃.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
