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770 pcs
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770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1555 is a Silicon NPN Power Transistor manufactured by Texas Instruments, suitable for high voltage and high speed applications. It is housed in a TO-3P(H)IS package and includes a built-in damper diode, which is beneficial for reducing switching losses.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 600V and a maximum Collector Current (IC) of 5A. The transistor also offers a low Collector-Emitter Saturation Voltage (VCEsat) of typically 3.0V at 4A and IB=0.8A, and a typical DC Current Gain (hFE) of 8 at 1A and VCE=5V. Its transition frequency (fT) is 3 MHz.
The 2SD1555 is specifically designed for color TV horizontal output applications. Its robust specifications make it suitable for power switching circuits where high voltage handling and speed are critical.
The component is supplied in a TO-3P(H)IS package, which is a through-hole mounting type. The absolute maximum ratings include a Collector-Base Voltage (VCBO) of 1500V and a maximum Collector Power Dissipation (PC) of 50W at 25℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1555 is 600V.
The maximum collector current (IC) for the 2SD1555 is 5A.
The 2SD1555 transistor is supplied in a TO-3P(H)IS package.
The 2SD1555 is designed for color TV horizontal output applications.
The typical collector-emitter saturation voltage (VCEsat) is 3.0V at IC=4A and IB=0.8A.
The typical DC current gain (hFE) is 8 at IC=1A and VCE=5V.
