| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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530 pcs
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530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD1313 is a Silicon NPN Power Transistor suitable for high power amplifier and high power switching applications. It is housed in a TO-3PL package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 350V and a continuous collector current (IC) of 25A. The device offers a high power dissipation capability of 200W at 25℃ (TC).
Additional features include a peak collector current (ICM) of 35A, a peak base current (IBM) of 15A, and a maximum junction temperature (Tj) of 150℃. The transistor also exhibits a typical fall time (tf) of 0.5μs at 15A and a maximum saturation voltage (VCE(sat)) of 1.0V at 15A, indicating good switching performance.
The operating temperature range for storage is from -55℃ to 150℃. This transistor is designed for applications requiring robust power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1313 is 350V.
The continuous collector current (IC) rating of the 2SD1313 is 25A.
The power dissipation (PC) of the 2SD1313 at 25℃ is 200W.
The 2SD1313 is supplied in a TO-3PL package.
The typical fall time (tf) for the 2SD1313 is 0.5μs at 15A.
The maximum saturation voltage (VCE(sat)) of the 2SD1313 is 1.0V at 15A.