| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Turn On Time |
The 2SD1276 is a silicon NPN power transistor manufactured by Mitsubishi Electric, designed for power amplification and high-speed switching applications. It comes in a TO-220Fa package, suitable for through-hole mounting.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 60V and a continuous Collector Current (IC) of 4A. The device also offers a high forward current transfer ratio (hFE) and fast switching times, with a typical turn-on time of 0.5μs, storage time of 4μs, and fall time of 1μs.
The transistor has a maximum power dissipation of 40W at Tc=25℃ and 2W at Ta=25℃. The operating junction temperature is rated up to 150℃, with a storage temperature range of -55℃ to 150℃.
This transistor is a complement to the 2SB950 and 2SB950A types. Its robust specifications make it suitable for various power control and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2SD1276 is 60V.
The continuous Collector Current (IC) rating for the 2SD1276 is 4A.
The 2SD1276 uses the TO-220Fa package.
The maximum operating junction temperature (Tj) for the 2SD1276 is 150℃.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.