| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature | |
| Storage Temperature |
The Hitachi 2SD1609 is a Silicon NPN Epitaxial Transistor, often used as a complementary pair with 2SB1109 and 2SB1110. It is designed for low frequency high voltage amplifier applications.
Key electrical specifications include a collector-to-emitter voltage (VCEO) of 160V, a collector current (IC) of 100mA, and a collector power dissipation (PC) of 1.25W at 25°C. The DC current transfer ratio (hFE) ranges from 60 to 320 at IC = 10mA and VCE = 5V. The gain bandwidth product (fT) is typically 140MHz.
This transistor comes in a TO-126 MOD package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C, with a storage temperature range of -45°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) for the 2SD1609 is 160V.
The maximum collector current (IC) for the 2SD1609 is 100mA.
The collector power dissipation (PC) for the 2SD1609 is 1.25W at 25°C.
The typical DC current transfer ratio (hFE) for the 2SD1609 is between 60 and 320 when tested at VCE = 5V and IC = 10mA.
The 2SD1609 transistor is supplied in a TO-126 MOD package.
The operating junction temperature (Tj) for the 2SD1609 is 150°C.
