| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SB1110 is a Silicon PNP Epitaxial Transistor suitable for low frequency high voltage amplifier applications. It is designed as a complementary pair with NPN transistors 2SD1609 and 2SD1610.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -200V for the 2SB1110 and -160V for the 2SB1109, and a maximum collector current (IC) of -100mA. The device has a maximum collector power dissipation (PC) of 1.25W at 25°C ambient temperature. The junction temperature (Tj) can reach up to 150°C, with storage temperatures ranging from -45°C to +150°C.
The transistor features a DC current transfer ratio (hFE) ranging from 60 to 320 under specific test conditions (VCE = -5V, IC = -10mA). The gain bandwidth product (fT) is typically 140MHz at VCE = -5V and IC = -10mA. The collector output capacitance (Cob) is typically 5.5pF.
Packaged in a TO-126 MOD package, the 2SB1110 is designed for through-hole mounting. Its complementary nature and voltage handling capabilities make it suitable for amplifier circuits requiring high voltage gain.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1110 is -200V.
The maximum collector current (IC) for the 2SB1110 is -100mA.
The collector power dissipation (PC) for the 2SB1110 is 1.25W at 25°C.
The typical gain bandwidth product (fT) for the 2SB1110 is 140MHz.
The 2SB1110 is supplied in a TO-126 MOD package.