| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SD1138 is a Silicon NPN Triple Diffused transistor suitable for low frequency, high voltage power amplifier applications, including TV vertical deflection output. It is designed as a complementary pair with the 2SB861.
Key electrical specifications include a collector-emitter voltage of 150V, a continuous collector current of 2A, and a peak collector current of 5A. The maximum power dissipation is rated at 1.8W at 25°C ambient temperature, or 30W at 25°C case temperature.
This transistor comes in a TO-220AB package, which is a through-hole mounting type. The operating junction temperature is up to 150°C, with a storage temperature range of -45°C to +150°C.
The 2SD1138 offers a DC current transfer ratio (hFE) ranging from 60 to 320 under specific test conditions. Its collector output capacitance is typically 20pF at 1MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1138 is 150V.
The continuous collector current (IC) for the 2SD1138 is 2A.
The power dissipation (PC) is 1.8W at 25°C ambient temperature and 30W at 25°C case temperature.
The 2SD1138 is supplied in a TO-220AB package.
The DC current transfer ratio (hFE1) ranges from 60 to 320 when tested at VCE = 4V and IC = 50mA.
The maximum operating junction temperature (Tj) is 150°C.