| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1109 from Hitachi is a silicon PNP epitaxial transistor suitable for low frequency, high voltage amplifier applications. It is designed as a complementary pair with 2SD1609 and 2SD1610 transistors.
Key electrical characteristics include a collector-to-emitter voltage (VCEO) of -160V and a continuous collector current (IC) of -100mA. The device has a maximum collector power dissipation (PC) of 1.25W at 25°C ambient temperature. The DC current transfer ratio (hFE) ranges from 60 to 320 at IC = -10mA and VCE = -5V.
This transistor is housed in a TO-126 MOD package, designed for through-hole mounting. The operating junction temperature is rated up to 150°C, with a storage temperature range of -45°C to +150°C.
It serves as a complementary pair with 2SD1609 and 2SD1610, making it suitable for various amplifier circuits requiring high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) for the 2SB1109 is -160V.
The continuous collector current (IC) rating for the 2SB1109 is -100mA.
The collector power dissipation (PC) for the 2SB1109 at 25°C is 1.25W.
The typical DC current transfer ratio (hFE1) for the 2SB1109 is between 60 and 320 when tested at VCE = -5V and IC = -10mA.
The 2SB1109 is supplied in a TO-126 MOD package.