2SC3998 The Sanyo Denki 2SC3998 is an NPN triple diffused planar silicon transistor designed for ultrahigh-definition CRT display horizontal deflection output applications. It offers high speed and high breakdown voltage.
Mfr Part #:

2SC3998

Available from 1 distributors
Mfr Name: Sanyo Denki
Sanyo Denki
The Sanyo Denki 2SC3998 is an NPN triple diffused planar silicon transistor designed for ultrahigh-definition CRT display horizontal deflection output applications. It offers high speed and high breakdown voltage.
Total Stock: 76 pcs
$ Price Range: $0.99

2SC3998 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
76 pcs
76 pcs On Request 1 On Request On Request On Request On Request On Request

2SC3998 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Mounting Type

2SC3998 Description

Short technical summary and product information.

The Sanyo Denki 2SC3998 is a high-performance NPN triple diffused planar silicon transistor. It is specifically designed for demanding applications such as ultrahigh-definition CRT display horizontal deflection output.

 

Key electrical characteristics include a high breakdown voltage of 1500V (VCBO) and 800V (VCEO), a continuous collector current of up to 25A, and a pulsed collector current of 50A. The transistor also features a high junction temperature rating of 150°C and a power dissipation of 250W at 25°C.

 

With a typical fall time of 100ns, the 2SC3998 is built for speed. It utilizes Sanyo's HVP and MBIT processes for enhanced reliability. The component is housed in a TO-3PBL package, suitable for through-hole mounting.

 

This transistor is not intended for applications requiring extremely high levels of reliability, such as life-support systems or aircraft control systems, where failure could result in serious physical or material damage. Always consult with a Sanyo representative before using this product in such critical applications.

2SC3998 Quick Information

Product Type: NPN Transistor
Canonical Name: 2SC3998 NPN Triple Diffused Planar Silicon Transistor
Subcategory: Single

2SC3998 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3998 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3998 Features

  • High breakdown voltage (VCBO=1500V)
  • High speed with fast fall time
  • High reliability HVP process
  • Designed for CRT display deflection
  • TO-3PBL package for through-hole mounting

2SC3998 Applications

  • Used in high-voltage switching circuits
  • Suitable for power regulation applications
  • Ideal for industrial power supplies
  • Applicable in automotive power modules

2SC3998 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter Voltage (VCEO) for the 2SC3998?

The maximum Collector-Emitter Voltage (VCEO) for the 2SC3998 is 800V.

What is the maximum Collector-Base Voltage (VCBO) for the 2SC3998?

The maximum Collector-Base Voltage (VCBO) for the 2SC3998 is 1500V.

What is the continuous collector current rating for the 2SC3998?

The continuous collector current (IC) rating for the 2SC3998 is 25A.

What is the package type for the 2SC3998 transistor?

The 2SC3998 transistor is supplied in a TO-3PBL package.

What is the typical fall time for the 2SC3998 transistor?

The typical fall time (tf) for the 2SC3998 transistor is 100ns.

2SC3998 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
KSD471A
KSD471A
On Semiconductor
The KSD471A is an NPN Epitaxial Silicon Transistor from On Semiconductor. It offers a collector-emitter voltage of 30V and a collector current of 1A.
View Part
2SB647
2SB647
Renesas
The Renesas 2SB647 is a Silicon PNP Epitaxial Transistor in a TO-92 Mod package. It is designed for low frequency power amplifier applications.
View Part
KSP56
KSP56
Samsung Electronics
The KSP56 is a PNP Epitaxial Silicon Transistor from Samsung Electronics. It offers a Collector-Emitter Voltage of up to -80V and a Collector Dissipation of 625mW.
View Part
SS8050
SS8050
CJ
The CJ SS8050 is an NPN Epitaxial Silicon Transistor designed for use as a 2W output amplifier. It features a collector-emitter voltage of 25V and a collector current of 1.5A.
View Part
Home
Account

Categories