| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3885 is a silicon NPN power transistor manufactured by SST, designed for applications requiring high breakdown voltage and high switching speeds. Its key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 600V and a continuous Collector Current (IC) of 7A.
This transistor is particularly suited for horizontal deflection output in high-resolution displays and high-speed switching regulator output stages. It features a high Collector-Base Voltage (VCBO) of 1400V and a maximum Collector Power Dissipation (PC) of 50W at 25℃.
Additional specifications include a Collector-Emitter Saturation Voltage (VCE(sat)) of 5V and a DC Current Gain (hFE) of 8 minimum. The switching characteristics are defined by a storage time (tstg) of 2.5μs and a fall time (tf) of 0.15μs.
The 2SC3885 is typically mounted through hole and is suitable for demanding power applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum Collector-Emitter Voltage (VCEO) is 600V.
The continuous Collector Current (IC) is 7A.
The maximum Collector Power Dissipation (PC) is 50W at 25℃.
The typical storage time (tstg) is 2.5μs and the typical fall time (tf) is 0.15μs.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
