STD60N3LH5
ST
The STMicroelectronics STD60N3LH5 is an N-channel Power MOSFET designed for high performance. It features a breakdown voltage of 30V and a maximum on-resistance of 8mΩ.
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The 2SC3178 from Fujitsu Semiconductor is an NPN bipolar junction transistor. This component is suitable for applications requiring a robust transistor with specific electrical characteristics.
Key electrical specifications include a maximum collector current of 2A, a collector emitter voltage of up to 850V, and a typical collector emitter saturation voltage of 1.5V. The device can handle a power dissipation of up to 60W, making it suitable for moderate power applications. Its maximum operating temperature is 150°C.
This transistor falls under the category of discrete semiconductor products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased classification. Its specifications suggest suitability for general-purpose amplification and switching tasks where these parameters are critical.
While specific packaging and mounting details are not provided in the available data, its classification implies it is a standard component for electronic circuit design. Further details regarding its precise application context and physical form factor would typically be found in its datasheet.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC3178 is 2A.
The collector emitter voltage rating for the 2SC3178 is 850V.
The power dissipation of the 2SC3178 is 60W.
The maximum operating temperature for the 2SC3178 is 150°C.
The RoHS status for the 2SC3178 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SC3178 is 1 Unlimited.
