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STD60N3LH5 The STMicroelectronics STD60N3LH5 is an N-channel Power MOSFET designed for high performance. It features a breakdown voltage of 30V and a maximum on-resistance of 8mΩ.
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STD60N3LH5

Available from 3 distributors
Mfr Name: ST
ST
The STMicroelectronics STD60N3LH5 is an N-channel Power MOSFET designed for high performance. It features a breakdown voltage of 30V and a maximum on-resistance of 8mΩ.
✓ Total Stock: 406,234 pcs
$ Price Range: $2.81

STD60N3LH5 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
401,778 pcs
On Request
401778 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,816 pcs
On Request
2816 pcs On Request 1 On Request On Request 10+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,640 pcs
On Request
1640 pcs On Request 1 On Request On Request 09+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STD60N3LH5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Power Dissipation
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STD60N3LH5 Description

Short technical summary and product information.

The STMicroelectronics STD60N3LH5 is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. This device is optimized for very low on-state resistance, contributing to a superior Figure of Merit (FOM).

 

Key electrical specifications include a breakdown voltage of 30V, a threshold voltage of 1.8V, and a maximum RDS(on) of 8mΩ. The typical drain-source resistance is 11.4mΩ, with a typical input capacitance of 1.35nF. Rise time is 33ns and fall time is 4.2ns.

 

This MOSFET has a maximum power dissipation of 60W and operates within a temperature range of -55°C to 175°C. It is housed in a DPAK package and designed for surface mounting.

 

The device's optimized performance makes it suitable for various power switching applications where efficiency and low on-resistance are critical.

STD60N3LH5 Quick Information

Product Type: N-channel Power MOSFET
Canonical Name: STMicroelectronics STD60N3LH5 N-channel Power MOSFET
Subcategory: N-Channel

STD60N3LH5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD60N3LH5 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD60N3LH5 Features

  • N-channel Power MOSFET technology.
  • 30V breakdown voltage rating.
  • Low 8mΩ maximum on-resistance.
  • Wide -55°C to 175°C operating temperature.
  • Surface mount DPAK package.

STD60N3LH5 Applications

  • Power management and switching circuits.
  • DC-DC converter designs.
  • Load switching applications.
  • Motor control systems.

STD60N3LH5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the STD60N3LH5?

30V.

What package is the STD60N3LH5 available in?

DPAK (surface mount).

What is the operating temperature range of the STD60N3LH5?

-55°C to 175°C.

What is the threshold voltage of the STD60N3LH5?

1.8V (nominal).

What is the maximum on-resistance of the STD60N3LH5?

8mΩ.

What is the maximum power dissipation of the STD60N3LH5?

60W.

What are the rise and fall times of the STD60N3LH5?

Rise time 33ns typical, fall time 4.2ns typical.

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