| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,315 pcs
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44315 pcs | On Request | 1 | On Request | On Request | 1646+ | On Request | On Request |
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| Technology |
The Toshiba TK40S10K3Z is an N-channel power MOSFET engineered for efficient switching power applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 40A, making it suitable for demanding power management tasks.
Key electrical characteristics include a low on-resistance (RDS(on)) of 22mΩ at 20A and 10V, and a gate threshold voltage (Vgs(th)) ranging from 2.0V to 4.0V. The MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and has a power dissipation rating of 60W.
Packaged in a DPAK (TO-252) surface-mount case, the TK40S10K3Z operates across a wide temperature range of -55°C to +175°C. Its design prioritizes high efficiency in switching power supplies and related electronic circuits.
The drain-source voltage rating is 100V.
The continuous drain current rating is 40A.
The maximum on-resistance is 22mΩ at a gate-source voltage of 10V and a drain current of 20A.
The operating temperature range is -55°C to +175°C.
The TK40S10K3Z is available in a DPAK (TO-252) package.
The gate threshold voltage ranges from 2.0V to 4.0V.
The maximum power dissipation is 60W.