| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72,320 pcs
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72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,273 pcs
|
9273 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Renesas NP23N06YDG-E2-AY is an N-channel Power MOSFET designed for high current switching applications. It offers a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 23A. The device exhibits a low on-state resistance (Rds(on)) of 27mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 11.5A.
Key electrical characteristics include a typical gate charge (Qg) of 27nC and a typical input capacitance (Ciss) of 1200pF at 25V drain-source voltage and 0V gate-source voltage. The MOSFET is designed for logic-level drive and is qualified for automotive applications according to AEC-Q101 standards.
Packaged in a compact Power SON-8 5x6mm surface-mount package with 8 leads, this MOSFET is suitable for applications requiring efficient power handling in a small footprint. Its design considerations include low on-state resistance and suitability for automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 23A.
The maximum on-resistance at VGS=10V and ID=11.5A is 27mOhm.
The typical gate charge is 27nC.
The typical input capacitance is 1200pF at VDS=25V, VGS=0V.
The package is Power SON-8 5x6 (HSON) with dimensions 5x5x1.45mm, surface mount, 8 leads.
It is an N-channel MOSFET.