STW80NE06-10
STKOR
STW80NE06-10 is an N-Channel power MOSFET from STKOR with a 60V breakdown voltage, 80A current rating, and 10mΩ maximum on-resistance.
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Toshiba 2SC2879A is a silicon NPN epitaxial planar transistor suitable for RF power and high-current switching applications. It is manufactured by Toshiba and features a maximum collector current of 25A, collector-emitter voltage of 18V, and a maximum power dissipation of 250W. The device operates at a maximum temperature of 175°C and has four terminals for connection. Its robust design makes it suitable for high-power RF amplification, power switching, and other demanding electronic circuits. The package type is not specified but is typically mounted on a heatsink for thermal management. The component complies with RoHS3 standards and has a moisture sensitivity level of 1, indicating unlimited storage and handling conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 25A.
The collector-emitter voltage is 18V.
The maximum power dissipation is 250W.
The maximum operating temperature is 175°C.
Yes, it is RoHS3 compliant.
The moisture sensitivity level is MSL 1 Unlimited.
