| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,556 pcs
|
1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation |
The Infineon IRF3205ZPBF is a HEXFET Power MOSFET utilizing advanced processing technology for extremely low on-resistance per silicon area. This device features a drain-source breakdown voltage (VDS) of 55V and a continuous drain current (ID) of up to 75A at 25°C case temperature. Its static drain-to-source on-resistance (RDS(on)) is a maximum of 6.5mΩ at 25°C.
Key electrical characteristics include a gate threshold voltage (VGS(th)) between 2.0V and 4.0V, and a typical gate charge (Qg) of 76nC. The MOSFET boasts fast switching speeds with typical turn-on delay time of 18ns and fall time of 67ns.
With a 175°C operating junction temperature and a power dissipation of 250W at 25°C, the IRF3205ZPBF is suitable for demanding applications. It is available in a TO-220-3 package, designed for through-hole mounting.
This MOSFET is designed for a wide variety of applications requiring efficient and reliable power switching. Its robust construction and advanced features make it a dependable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 55V.
The typical static drain-to-source on-resistance is 4.9mΩ.
The maximum continuous drain current is 75A.
The operating junction temperature range is -55°C to +175°C.
The IRF3205ZPBF is supplied in a TO-220-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.