| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The STU612D by VBsemi is a dual N+P-channel MOSFET designed for efficient power switching and high-frequency applications. It utilizes Trench technology to achieve low on-resistance and high current-carrying capability.
This MOSFET features a maximum drain-source voltage (VDS) of ±40V and a maximum drain current (ID) of ±50A. The on-resistance (RDS(ON)) is rated at 14mΩ at VGS = 4.5V and 16mΩ at VGS = 10V for both N-channel and P-channel configurations. This low RDS(ON) minimizes energy loss during current flow, enhancing overall system efficiency.
The STU612D is housed in a TO252-4L package, suitable for surface mount applications. Its dual-channel configuration provides bidirectional current control, making it ideal for circuits requiring positive and negative current handling. The operating temperature range is from -55°C to +150°C.
Applications for the STU612D include battery management systems (BMS), DC-DC converters, electric vehicle power management, inverters, and high-power switching power supplies. Its ability to handle high currents and provide efficient switching makes it a versatile component for various power electronics designs.
The maximum drain-source voltage (VDS) for the STU612D is ±40V.
The maximum drain current (ID) for the STU612D is ±50A.
The on-resistance (RDS(ON)) of the STU612D at VGS = 4.5V is 14mΩ for both N and P channels.
The STU612D MOSFET is in a TO252-4L package.
The operating temperature range for the STU612D is -55°C to +150°C.