BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43,324 pcs
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43324 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Industrial Grade | |
| SVHC Present |
The STW80NE06-10 is an N-Channel power MOSFET designed for high-current switching applications. It features a breakdown voltage of 60V and a continuous drain current rating of 80A, making it suitable for power management and motor control circuits.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 10mΩ, an input capacitance of 7.6nF, and fast switching speeds with a rise time of 150ns and fall time of 75ns. The device can dissipate up to 180W (max power dissipation) and operates over a junction temperature range of -65°C to +175°C.
The MOSFET is housed in a TO-247-3 through-hole package, which provides excellent thermal performance for high-power designs.
The breakdown voltage is 60V.
The continuous drain current rating is 80A.
The maximum RDS(on) is 10mΩ.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -65°C to +175°C.