| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC2791 is a silicon NPN triple diffused type power bipolar transistor housed in a TO-3 package. It is engineered for applications requiring high speed and high voltage switching capabilities.
Key electrical characteristics include a maximum collector current of 5A and a high collector-emitter breakdown voltage of 800V. These specifications make it suitable for use in switching regulators and high-speed DC-DC converters.
The transistor's design emphasizes excellent switching times, a critical parameter for efficient power conversion circuits. Its TO-3 metal package provides robust thermal performance and mechanical stability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC2791 is 5A.
The collector-emitter breakdown voltage of the 2SC2791 is 800V.
The 2SC2791 is an NPN power bipolar transistor.
The 2SC2791 is supplied in a TO-3 package.
