| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor from Toshiba, model 2SC2873-YTE12L,ZC, is suitable for RF applications. It offers a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 2A.
The transistor has a transition frequency of 120MHz and a maximum power dissipation of 500mW. The Vce saturation is specified at 500mV at 50mA collector current and 1A base current. Its DC current gain (hFE) is a minimum of 70 at 500mA collector current and 2V collector-emitter voltage.
The operating temperature range extends up to 150°C (TJ). It is provided in a surface mount package, specifically TO-243AA (PW-MINI), making it suitable for automated assembly processes.
Environmental compliance includes RoHS3 status. The Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 2A.
The maximum collector-emitter breakdown voltage is 50V.
The transition frequency is 120MHz.
It uses a surface mount TO-243AA package with a PW-MINI supplier device package.
The maximum power dissipation is 500mW.
The maximum operating junction temperature is 150°C.