| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Frequency | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel | |
| Transistor Type |
The Toshiba HN3C10FU is a silicon NPN epitaxial planar transistor suitable for VHF-UHF band low-noise amplifier applications. This component is housed in an ultra-super mini type US6 package with 6 leads, designed for surface mounting.
Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 12V and a maximum collector current (Ic) of 80mA. The transistor operates at frequencies up to 7GHz, making it suitable for high-frequency applications.
The HN3C10FU contains two devices within a single package, offering space and cost efficiencies in circuit design. Its epitaxial planar construction ensures reliable performance for demanding amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the HN3C10FU is 12V.
The maximum collector current (Ic) for the HN3C10FU is 80mA.
The HN3C10FU transistor operates at frequencies up to 7GHz.
The HN3C10FU is an NPN epitaxial planar silicon transistor.
The HN3C10FU is supplied in a US6 ultra super mini type package.
The HN3C10FU is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the HN3C10FU is 1.