| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,781,538 pcs
|
2781538 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,604 pcs
|
2604 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Transistor Type |
The 2SC4116-GR from Toshiba is an NPN bipolar junction transistor (BJT) suitable for discrete semiconductor applications. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA.
Key electrical characteristics include a typical DC current gain (hFE) of 70 at 2mA and 6V, a maximum power dissipation of 100mW, and a transition frequency of 80MHz. The Vce saturation is specified at 250mV typical at 10mA collector current and 100mA base current, with a collector cutoff current of 100nA.
This transistor is housed in a surface-mount SC-70 (SOT-323) package, making it suitable for compact electronic designs. The operating temperature range extends up to 125°C (TJ).
Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150 mA
50 V
100 mW
80 MHz
70 minimum at 2 mA collector current and 6 V collector-emitter voltage.
SC-70 (SOT-323) surface-mount package.
125°C