| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC2551 is a Silicon NPN Epitaxial Transistor, manufactured using the PCT process, suitable for high voltage control applications. It is designed for use in plasma displays, Nixie tube drivers, and cathode ray tube brightness control.
Key electrical specifications include a high collector-emitter voltage (VCEO) of 300V and a collector-base voltage (VCBO) of 300V. The transistor offers a maximum collector current (IC) of 100mA and a maximum collector power dissipation (PC) of 400mW. It also features a low saturation voltage (VCE(sat)) of 0.5V (max) and a small collector output capacitance (Cob) of 3pF (typ.).
The 2SC2551 is housed in a JEDEC TO-92 (JEITA SC-43) package, making it suitable for through-hole mounting. Its complementary transistor is the 2SA1091. The operating junction temperature is rated up to 150°C, with a storage temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC2551 is 300V.
The maximum collector current (IC) for the 2SC2551 is 100mA.
The 2SC2551 comes in a TO-92 package.
The typical transition frequency (fT) of the 2SC2551 is 80 MHz.
The collector-emitter saturation voltage (VCE(sat)) for the 2SC2551 is a maximum of 0.5V.
