| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34,000 pcs
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34000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,700 pcs
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1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC557C from NXP Semiconductors is a PNP bipolar junction transistor (BJT) suitable for general-purpose switching and amplification tasks. It is housed in a compact TO-92 (SOT54) plastic package, making it ideal for through-hole mounting on printed circuit boards.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100 mA. The transistor offers a DC current gain (hFE) ranging from 420 to 800 under typical test conditions (IC = -2 mA, VCE = -5V). Its collector-emitter saturation voltage (VCEsat) is a maximum of 300 mV at IC = -10 mA and IB = -0.5 mA.
With a maximum power dissipation of 500 mW at 25°C ambient temperature and a thermal resistance of 250 K/W, the BC557C is designed for moderate power applications. The operating temperature range is from -65°C to +150°C, ensuring reliability across various environmental conditions. Its NPN complement is the BC547.
This transistor is well-suited for a variety of electronic circuits requiring signal amplification or switching functions. The TO-92 package is common in through-hole designs, offering ease of assembly and a small footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC557C is 45 V.
The continuous collector current (IC) for the BC557C is 100 mA.
The DC current gain (hFE) for the BC557C ranges from 420 to 800.
The BC557C is available in a TO-92 or SOT54 plastic package.
The operating ambient temperature range for the BC557C is -65°C to +150°C.