2N7002K-13
Diodes Incorporated
The Diodes Incorporated 2N7002K-13 is an N-channel MOSFET designed for general-purpose switching applications. It features a 60V breakdown voltage and 300mA maximum drain current.
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2,930 pcs
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2930 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2412KLNT146E from ROHM Semiconductor is a general-purpose NPN small signal bipolar junction transistor (BJT). It is suitable for amplifier applications and features a maximum collector current of 150 mA and a collector-emitter voltage of up to 40 V.
This silicon transistor boasts a minimum DC current gain (hFE) of 390, indicating good amplification capabilities. The maximum power dissipation in ambient conditions is 0.2000 W.
The component is housed in a small outline rectangular package, designed for surface mounting. It features gull wing terminals with a tin, silver, and copper finish, and has a plastic/epoxy body material. The dual terminal position is typical for this package style.
Compliance information indicates it is RoHS3 compliant and lead-free. The Moisture Sensitivity Level (MSL) is 1, meaning it has unlimited shelf life under recommended storage conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2SC2412KLNT146E is 150 mA.
The maximum collector-emitter voltage (Vce) for the 2SC2412KLNT146E is 40 V.
The minimum DC current gain (hFE) for the 2SC2412KLNT146E is 390.
The 2SC2412KLNT146E is supplied in a small outline rectangular package suitable for surface mounting, with gull wing terminals.
The 2SC2412KLNT146E is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the 2SC2412KLNT146E is 1 Unlimited.