BCX41E6327HTSA1
Infineon
The Infineon BCX41E6327HTSA1 is an NPN bipolar transistor designed for general AF applications. It features a high breakdown voltage and a surface-mount SOT-23 package.
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2,433 pcs
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2433 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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The 2SC2371 from NEC is a silicon NPN power transistor housed in a TO-126 package. It is engineered for high voltage and high frequency applications, making it suitable for TV chroma output and vertical output stages.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 300V and a collector current (IC) of 0.1A. The device offers a DC current gain (hFE) ranging from 40 to 250 at 10mA collector current and 10V collector-emitter voltage. Its transition frequency (fT) is 50MHz at 10mA collector current and 30V collector-emitter voltage.
With a collector power dissipation of 1.25W at Ta=25°C and 10W at TC=25°C, the 2SC2371 is designed for moderate power handling. The operating temperature range is from -40°C to 150°C.
The transistor is specified with a collector-emitter saturation voltage (VCEsat) of 1.5V maximum at 30mA collector current and 3mA base current. The base-emitter on voltage (VBE) is typically 1.2V at 10mA collector current and 10V collector-emitter voltage.
| Qty | Low | High |
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| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 300V.
The maximum continuous collector current (IC) is 0.1A, with a peak current (ICM) of 0.2A.
The 2SC2371 is housed in a TO-126 package.
The minimum transition frequency (fT) is 50MHz.
The DC current gain (hFE) ranges from 40 to 250 at IC=10mA and VCE=10V.
The maximum junction temperature (Tj) is 150°C.
