| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,575 pcs
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1575 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC308B is a PNP Epitaxial Silicon Transistor manufactured by Texas Instruments. It is designed for switching and amplifier applications.
Key electrical characteristics include a collector-emitter voltage (Vces) of -50V and a collector-emitter voltage (Vceo) of -45V for the BC307 variant and -25V for the BC308/309 variants. The continuous collector current (Ic) is rated at -100mA, with a collector power dissipation (Pc) of 500mW. The junction temperature (Tj) can reach up to 150°C, and storage temperatures range from -55°C to 150°C.
This transistor features a DC current gain (hFE) typically ranging from 120 to 800 depending on the classification (A, B, or C). The saturation voltages (Vce(sat) and Vbe(sat)) are specified at various current levels. The current gain bandwidth product (fT) is typically 130MHz at 50MHz.
The BC308B is housed in a TO-92 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) for the BC308B is -30V, and the Vceo is -25V.
The continuous collector current (Ic) for the BC308B is -100mA.
The collector power dissipation (Pc) for the BC308B is 500mW.
The storage temperature range for the BC308B is -55°C to 150°C.
The DC current gain (hFE) for the BC308B is typically 800 at V CE = -5V and I C = -2mA.
The BC308B comes in a TO-92 package.