| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,108 pcs
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3108 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCX41E6327HTSA1 is a general-purpose NPN silicon transistor suitable for AF and switching applications. It offers a high collector-emitter breakdown voltage of 125V and a maximum continuous collector current of 800mA.
This transistor operates with a maximum power dissipation of 330mW and has a transition frequency of 100MHz. The Vce saturation voltage is specified at a maximum of 900mV at 30mA base current and 300mA collector current. The minimum DC current gain (hFE) is 40 at 200mA collector current and 1V collector-emitter voltage.
Packaged in a compact PG-SOT23 (TO-236-3, SC-59) surface-mount case, the BCX41E6327HTSA1 is designed for ease of integration into various electronic circuits. Its complementary type is the BCX42 PNP transistor. The operating temperature range is from -65°C to 150°C.
This component is RoHS3 compliant and REACH unaffected, with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 125V.
The maximum continuous collector current is 800mA.
The transition frequency is 100MHz.
The operating temperature range is -65°C to 150°C.
It is supplied in a PG-SOT23 surface mount package.