| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The 2SB966-Q is a PNP bipolar junction transistor manufactured by NEC. It is designed for applications requiring a high current handling capability, with a continuous collector current rating of -8A and a collector dissipation of 80W.
Key electrical characteristics include a maximum collector-emitter voltage of -120V and a maximum collector-base voltage of -120V. The DC current gain (hFE) ranges from 100 to 200. The transition frequency is a minimum of 65MHz.
This transistor operates within a junction temperature range of -55 to +150°C. It is supplied in a TO-3P package, suitable for through-hole mounting.
The 2SB966-Q has a complementary NPN transistor, the 2SD1289-Q. It can be replaced by several other part numbers, including the 2SA1093 and MJW1302A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SB966-Q is a PNP bipolar transistor.
The maximum collector-emitter voltage is -120V.
The continuous collector current is -8A.
The power dissipation is 80W.
The DC current gain (hFE) ranges from 100 to 200.
The minimum transition frequency is 65MHz.
The operating and storage junction temperature range is -55 to +150°C.
