HAT2187WP-EL-E
Renesas
The Renesas HAT2187WP-EL-E is an N-Channel Power MOSFET designed for various applications. It features a 200V drain-source breakdown voltage and a continuous drain current of 17A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation |
The 2SB1038 is a Silicon PNP Transistor manufactured by NEC, suitable for power transistor applications. It offers a collector-emitter voltage (Vce) of -60V and a collector current (Ic) of up to -3A (DC) or -5A (AC).
With a maximum power dissipation (Pd) of 30W and a transition frequency (fT) of 20MHz, this transistor is designed for robust performance in power applications. Its complementary part is the 2SD1310.
The information provided is a guide for applications. The products are not designed for use in equipment requiring specialized quality and/or reliability, or in applications in hazardous environments, the aerospace industry, or the medical field.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V
-3A
-5A
30W
20MHz
RoHS3 Compliant
1 Unlimited
