| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,535 pcs
|
4535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Configuration | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Number of Channels | |
| Power Dissipation |
The Renesas 2SK3736-E is an N-Channel single power MOSFET with a maximum drain-source voltage of 250V and a continuous drain current of 6A. It features a low on-resistance, with a maximum of 700mohm at 4.5V gate drive and 800mohm at 1.8V/2.5V. The typical input capacitance (Ciss) is 450pF and the typical gate charge (Qg) is 17nC.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It has a power dissipation rating of 30W and is qualified for industrial applications. The device includes a built-in SBD (Schottky Barrier Diode).
Key electrical characteristics include a gate-source voltage (Vgs) of 10V and a gate-source cutoff voltage (Vgs(off)) of 1.5V. The 2SK3736-E is designed for various industrial and consumer uses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
6A.
700mOhm maximum.
TO-220AB through-hole package.
Yes, it has a built-in SBD.
17nC.
30W.