| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Renesas HAT2187WP-EL-E is an N-Channel Power MOSFET. It offers a drain-source breakdown voltage (Vds) of 200V at 25°C and a continuous drain current (Id) of 17A. The on-resistance (Rds On) is typically 94 mOhm at 8.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4.5V at 1mA, with a typical gate charge (Qg) of 26nC at 10V. The maximum gate-source voltage (Vgs) is ±30V, and the input capacitance (Ciss) is typically 1200pF at 25V.
This MOSFET has a power dissipation (Pd) of 30W and an operating temperature range up to 150°C. It is housed in an 8-WPAK surface-mount package. The part is supplied on tape and reel.
Key electrical characteristics include a high breakdown voltage and a low on-resistance, making it suitable for power switching applications. The surface-mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the HAT2187WP-EL-E is 150°C.
The HAT2187WP-EL-E is provided in an 8-WPAK package.
The Drain-Source Breakdown Voltage is 200V at 25°C.
The Continuous Drain Current is 17A (Ta).
The typical On-Resistance is 94 mOhm, measured at 8.5A and 10V.
The typical Gate Threshold Voltage is 4.5V at 1mA.
The maximum Power Dissipation is 30W (Tc).