| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
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2,850 pcs
$0.03
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2850 pcs |
$0.03
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1 | On Request | On Request | On Request | On Request | On Request |
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The BC858BWT1 is a PNP bipolar junction transistor manufactured by On Semiconductor. This component is designed for general-purpose applications and features a collector emitter voltage of 80V and a collector current of 7A. Its saturation voltage is typically 1.2V, and it has a power dissipation rating of 30W. The transition frequency is 5MHz, with a gain (hFE) ranging from 40 to 320.
This transistor is housed in a TO-220 package, suitable for through-hole mounting. Its complementary NPN counterpart is also available, making it versatile for various circuit designs. The low noise characteristic makes it suitable for amplification stages where signal integrity is important.
Key electrical parameters include a maximum collector emitter voltage of 80V and a maximum collector current of 7A. The typical saturation voltage is 1.2V, and the power dissipation is rated at 30W. The transition frequency (fT) is 5MHz, and the DC current gain (hFE) ranges from 40 to 320, indicating its amplification capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector emitter voltage is 80V.
The maximum collector current is 7A.
The package type is TO-220.
It is mounted using the through-hole method.
The typical saturation voltage is 1.2V.
The power dissipation is 30W.
The transition frequency is 5MHz.