| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB1034 is a Silicon PNP Power Transistor housed in a TO-126 package. This component is engineered for power amplifier applications, offering desirable electrical characteristics.
Key specifications include a collector-base voltage (V_CBO) of -80V and a collector-emitter voltage (V_CEO) of -80V, both under specified conditions. The emitter-base voltage (V_EBO) is rated at -8V. It can handle a continuous collector current (I_C) of up to -2A and a base current (I_B) of -0.5A. The total power dissipation (P_C) is 15W at a case temperature of 25°C.
Thermal management is crucial for this device, with a maximum junction temperature (T_j) of 150°C and a storage temperature range from -55°C to 150°C. The transistor is designed with low collector saturation voltage and high DC current gain, making it suitable for efficient power amplification.
This transistor is intended for through-hole mounting. Its design and specifications make it a component choice for engineers developing power amplifier circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-80V
-2A
TO-126
15W
-55°C to 150°C
