| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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390 pcs
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390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1187 from ROHM Semiconductor is a silicon PNP power transistor housed in a TO-220Fa package. This component is engineered for low frequency power amplifier applications, offering excellent DC current gain characteristics and a wide safe operating area.
Key electrical specifications include a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -3A, with a peak collector current of -6A. The transistor exhibits a low saturation voltage, with VCEsat typically at -1.0V and VBEsat at -1.5V under specific test conditions. The DC current gain (hFE) ranges from 60 to 320.
Absolute maximum ratings are provided for safe operation, including a collector-base voltage (VCBO) of -80V and an emitter-base voltage (VEBO) of -5V. Power dissipation is rated at 30W with a case temperature of 25°C and 2W with an ambient temperature of 25°C. The junction temperature is specified up to 150°C, with storage temperatures ranging from -55°C to 150°C.
This transistor is a complement to the 2SD1761 type. Its design makes it suitable for various power amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1187 is -60V.
The maximum continuous collector current (IC) for the 2SB1187 is -3A.
The 2SB1187 has a power dissipation rating of 30W at TC=25°C and 2W at Ta=25°C.
The DC current gain (hFE) for the 2SB1187 ranges from 60 to 320.
The 2SB1187 is supplied in a TO-220Fa package.