| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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The IR2111(S) from Infineon is a high voltage, high speed power MOSFET and IGBT driver. It is designed for half-bridge applications, featuring dependent high and low side referenced output channels. The device operates fully up to 600V and is tolerant to negative transient voltage with dV/dt immunity.
Key electrical specifications include a gate drive supply range of 10 to 20V, undervoltage lockout for both channels, and CMOS Schmitt-triggered inputs. It offers matched propagation delay for both channels and internally set deadtime to prevent shoot-through. The high side output is in phase with the input.
The IR2111 is available in an 8-Lead PDIP and an 8-Lead SOIC package. Its floating channel can drive an N-channel power MOSFET or IGBT in the high side configuration, making it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The absolute maximum high side floating supply voltage is 625V.
The IR2111 is available in 8-Lead PDIP and 8-Lead SOIC packages.
The typical deadtime is 650 ns.
The typical propagation delay is 750 ns.
The high side floating supply offset voltage rating is 600V (absolute maximum).