| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
124 pcs
|
124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The 2SC3591 from Sanyo Denki is an NPN Epitaxial Planar Silicon Transistor specifically designed for High-Definition CRT Display Horizontal Deflection Output Applications. This component features fast switching speed and low saturation voltage, attributed to its adoption of the MBIT process.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 200V and a maximum collector current (IC) of 7A. The pulse collector current (ICP) can reach up to 12A, with a maximum power dissipation (PC) of 50W. The transistor operates within a junction temperature range of -55°C to 150°C.
Packaged in a TO-220AB through-hole configuration, the 2SC3591 is suitable for various electronic designs requiring reliable NPN transistor performance. Its robust specifications make it a suitable choice for demanding display applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC3591 transistor is 200V.
The maximum collector current (IC) for the 2SC3591 transistor is 7A.
The maximum power dissipation (PC) of the 2SC3591 transistor is 50W.
The operating temperature range for the 2SC3591 transistor is -55°C to 150°C.
The 2SC3591 transistor is supplied in a TO-220AB package.
