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2SB1011 The 2SB1011 is a Silicon PNP triple diffusion planar type power transistor from American Semiconductor Corp, designed for low-frequency output amplification. It features a high collector-emitter voltage of -400V.
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2SB1011

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Mfr Name: American Semiconductor Corp
American Semiconductor Corp
The 2SB1011 is a Silicon PNP triple diffusion planar type power transistor from American Semiconductor Corp, designed for low-frequency output amplification. It features a high collector-emitter voltage of -400V.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

2SB1011 Available from 1 distributor

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2SB1011 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Junction Temperature
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Storage Temperature
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2SB1011 Description

Short technical summary and product information.

The 2SB1011 is a Silicon PNP triple diffusion planar type power transistor manufactured by American Semiconductor Corp. It is specifically designed for low-frequency output amplification applications. Key electrical characteristics include a high collector-emitter voltage (VCEO) of -400V and a collector current (IC) of up to -100mA. The device also offers a collector power dissipation (PC) of 1.2W at 25°C.

 

The transistor is housed in a TO-126B-A1 package, suitable for through-hole mounting. Its electrical properties, such as a minimum forward current transfer ratio (hFE) of 30 and a transition frequency (fT) of 70MHz, make it suitable for various audio frequency and switching applications. The absolute maximum ratings include a junction temperature of 150°C and a storage temperature range of -55°C to +150°C.

2SB1011 Quick Information

Product Type: Power Transistor
Canonical Name: 2SB1011 Silicon PNP triple diffusion planar type Power Transistor
Subcategory: PNP

2SB1011 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1011 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1011 Features

  • High collector-emitter voltage of -400V.
  • Suitable for low-frequency amplification.
  • Collector power dissipation of 1.2W.
  • TO-126B-A1 package for through-hole mounting.
  • Minimum hFE of 30 at specified conditions.

2SB1011 Applications

  • Used in low-frequency output stages.
  • Suitable for audio frequency amplifiers.
  • Applicable in low-speed switching circuits.
  • General purpose amplification tasks.

2SB1011 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the 2SB1011?

The 2SB1011 is packaged in a TO-126B-A1 through-hole package.

What is the collector-base voltage rating of the 2SB1011?

-400V

What is the maximum collector current for the 2SB1011?

-100mA

What is the transition frequency of the 2SB1011?

70MHz

What is the junction temperature limit for the 2SB1011?

150°C

Is the 2SB1011 RoHS compliant?

Yes, it is RoHS3 compliant.

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