| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Transistor Type |
The Toshiba 2SA739 is a silicon PNP triple diffused mesa type transistor. This component is designed for electronic circuits requiring a PNP transistor with specific electrical characteristics.
Key electrical specifications include a maximum collector current of 3A and a collector emitter voltage rating of 400V. These parameters make the 2SA739 suitable for applications within its specified limits.
As a discrete semiconductor component, the 2SA739 is typically used in amplification and switching applications. Its triple diffused mesa construction is characteristic of certain bipolar junction transistor designs.
Further details regarding package type, mounting, and specific operating conditions would be available in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA739 is 3A.
The collector emitter voltage of the 2SA739 is 400V.
The 2SA739 is a silicon PNP triple diffused mesa type transistor.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
