2N7002K-13
Diodes Incorporated
The Diodes Incorporated 2N7002K-13 is an N-channel MOSFET designed for general-purpose switching applications. It features a 60V breakdown voltage and 300mA maximum drain current.
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200,889 pcs
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200889 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA2206 is a PNP silicon bipolar junction transistor (BJT) suitable for general-purpose small signal applications. It features a maximum collector current of 2A and a maximum collector-emitter voltage of 80V. The transistor has a minimum DC current gain (hFE) of 60 and a nominal transition frequency (fT) of 100 MHz.
Packaged in a surface-mount SC-62 small outline case, the 2SA2206 has a plastic/epoxy body and flat terminals. Its rectangular shape and small outline package make it suitable for space-constrained designs. The component is classified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected.
This transistor is ideal for switching applications where its characteristics can be leveraged for efficient signal control. The PNP polarity and small signal type indicate its use in amplifying or switching low-power signals within electronic circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2SA2206 is 2A.
The maximum collector-emitter voltage (Vce) for the 2SA2206 is 80V.
The minimum DC current gain (hFE) for the 2SA2206 is 60.
The nominal transition frequency (fT) of the 2SA2206 is 100 MHz.
The 2SA2206 is a PNP general purpose small signal bipolar junction transistor.
The 2SA2206 is supplied in an SC-62 small outline surface mount package.