KSE45H11TU
On Semiconductor
The On Semiconductor KSE45H11TU is a PNP bipolar transistor designed for various electronic applications. It offers a breakdown voltage of 80V and a maximum collector current of 10A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,266 pcs
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11266 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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1,675 pcs
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1675 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The Toshiba 2SA1015-GR is a PNP bipolar junction transistor (BJT) designed for various electronic applications. This component is manufactured by Toshiba and falls under the category of discrete semiconductor products.
Key specifications include its PNP transistor type. Environmental compliance data indicates it is RoHS3 Compliant and REACH Unaffected. The Moisture Sensitivity Level (MSL) is rated as Level 1, indicating unlimited shelf life under recommended storage conditions.
This transistor is suitable for general-purpose amplification and switching applications where a PNP type is required. Its compliance with RoHS3 and REACH standards makes it suitable for use in products destined for markets with stringent environmental regulations.
Further details regarding specific electrical characteristics, operating conditions, and package information would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SA1015-GR is a PNP transistor.
The 2SA1015-GR is RoHS3 Compliant.
The MSL for the 2SA1015-GR is Level 1.
The 2SA1015-GR is REACH Unaffected.
