| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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136,586 pcs
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136586 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor KSE45H11TU is a PNP bipolar junction transistor (BJT) suitable for discrete semiconductor applications. It features a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 10A. The transistor has a transition frequency of 40MHz and a maximum power dissipation of 1.67W.
This component is housed in a through-hole TO-220-3 package, making it suitable for standard PCB mounting. The operating temperature range is up to 150°C (TJ). Its specifications make it a viable option for power switching and amplification circuits where these parameters are critical.
The KSE45H11TU is RoHS3 Compliant, REACH Unaffected, and has an MSL rating of 1. It is listed as obsolete by the manufacturer.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 A.
80 V.
TO-220-3.
Up to 150°C junction temperature.
Minimum 60 at 2A collector current and 1V collector-emitter voltage.
40 MHz.
1.67 W maximum.