| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | 93+ | On Request | On Request |
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The Philips 2N4033 is a PNP silicon transistor manufactured using the epitaxial planar process. It is specifically designed for high current general purpose amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. The device also offers a maximum power dissipation of 1.25W at ambient temperature and 7W when the case temperature is 25°C. Thermal resistance from junction to ambient (ΘJA) is 140 °C/W, and from junction to case (ΘJC) is 20 °C/W.
This transistor is housed in a TO-39 case and is suitable for through-hole mounting. It operates within a junction temperature range of -65 to +200 °C. The 2N4033 is suitable for various amplifier circuits requiring robust current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
1A.
-65 to +200°C.
TO-39 through-hole package.
At Vce=5V and Ic=100mA, hFE ranges from 100 to 300.
100 to 400 MHz at Vce=10V, Ic=50mA.
1.25W at ambient, 7W at case temperature 25°C.