2N4427 The 2N4427 is a bipolar junction transistor with key electrical specs including a collector-base voltage of 40V and a collector-emitter voltage of 20V.
Mfr Part #:

2N4427

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4427 is a bipolar junction transistor with key electrical specs including a collector-base voltage of 40V and a collector-emitter voltage of 20V.
✓ Total Stock: 1,290 pcs
$ Price Range: $0.99

2N4427 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,290 pcs
1290 pcs On Request 1 On Request On Request On Request On Request On Request

2N4427 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Power Dissipation

2N4427 Description

Short technical summary and product information.

The 2N4427 is a bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a collector-base voltage of up to 40V and a collector-emitter voltage of 20V. The device can handle a continuous collector current of 400mA and a continuous base current of 400mA. It features a power dissipation limit of 1W at 25°C. The transistor is suitable for use in various electronic circuits where reliable switching and amplification are needed. It is typically packaged in a form compatible with through-hole mounting, suitable for PCB assembly and prototyping.

2N4427 Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: 2N4427 Bipolar Junction Transistor

2N4427 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4427 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4427 Features

  • Maximum collector-base voltage of 40V
  • Maximum collector-emitter voltage of 20V
  • Maximum power dissipation of 1W at 25°C
  • Continuous collector and base currents of 400mA

2N4427 Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for general-purpose transistor switching
  • Compatible with through-hole PCB mounting

2N4427 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-base voltage of the 2N4427?

The collector-base voltage of the 2N4427 is 40V.

What is the collector-emitter voltage of the 2N4427?

The collector-emitter voltage of the 2N4427 is 20V.

What is the maximum power dissipation of the 2N4427?

The maximum power dissipation of the 2N4427 is 1W at 25°C.

What are the maximum collector and base currents for the 2N4427?

The maximum continuous collector and base currents are both 400mA.

2N4427 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BZX85C12TR5K
BZX85C12TR5K
On Semiconductor
The ON Semiconductor BZX85C12TR5K is a Zener diode with a nominal Zener voltage of 12V and a power dissipation of 1W. It features a tolerance of ±5% and is housed in a DO-204AL (DO-41) package.
View Part
TPC8129
TPC8129
Toshiba
The Toshiba TPC8129 is a Silicon P-Channel MOSFET. It features a breakdown voltage of -30V and a maximum power dissipation of 1W.
View Part
UT3NP06G-S08-R
UT3NP06G-S08-R
UTC
The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET featuring N-channel and P-channel configurations. It offers 60V N-channel and -60V P-channel ratings with low on-state resistance.
View Part
2SK1764KYTR-E
2SK1764KYTR-E
Renesas
The Renesas 2SK1764KYTR-E is an N-channel single power MOSFET with a 60V drain-source voltage and 2A continuous drain current. It is designed for surface mounting in an UPAK/SC-62 package.
View Part
Home

Categories