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TPC8129 The Toshiba TPC8129 is a Silicon P-Channel MOSFET. It features a breakdown voltage of -30V and a maximum power dissipation of 1W.
Mfr Part #:

TPC8129

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8129 is a Silicon P-Channel MOSFET. It features a breakdown voltage of -30V and a maximum power dissipation of 1W.
✓ Total Stock: 254,898 pcs
$ Price Range: $2.81

TPC8129 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
226,000 pcs
On Request
226000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
28,578 pcs
On Request
28578 pcs On Request 1 On Request On Request 19+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
320 pcs
On Request
320 pcs On Request 1 On Request On Request 20+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8129 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Power Dissipation
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TPC8129 Description

Short technical summary and product information.

The Toshiba TPC8129 is a Silicon P-Channel MOSFET designed for surface mount applications. It offers a breakdown voltage of -30V and a low drain-source on-resistance (RDS(on) Max) of 22mΩ. The device has a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C.

 

Key electrical characteristics include an input capacitance of 1.65nF, a rise time of 8ns, and a fall time of 42ns. The MOSFET is housed in an SOIC package, making it suitable for compact electronic designs.

 

This component is part of Toshiba's line of P-Channel MOSFETs, often used in power switching and amplification circuits. Its specifications suggest suitability for applications requiring moderate voltage and current handling capabilities in a surface-mount form factor.

TPC8129 Quick Information

Product Type: MOSFET
Canonical Name: TPC8129 Silicon P-Channel MOSFET
Subcategory: P-Channel

TPC8129 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8129 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8129 Features

  • P-Channel MOSFET by Toshiba.
  • -30V breakdown voltage rating.
  • 22mΩ maximum drain-source resistance.
  • 1W maximum power dissipation.
  • SOIC package for surface mounting.

TPC8129 Applications

  • Suitable for power switching circuits.
  • Used in signal amplification.
  • Compact surface-mount designs.
  • General purpose MOSFET applications.

TPC8129 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the TPC8129?

-55°C to 150°C.

What package type is the TPC8129 available in?

SOIC surface-mount package.

What is the maximum drain-source resistance of the TPC8129?

22mΩ.

What is the input capacitance of the TPC8129?

1.65nF.

What is the breakdown voltage of the TPC8129?

-30V.

What is the power dissipation of the TPC8129?

1W.

What are the switching times of the TPC8129?

Typical rise time 8ns, fall time 42ns.

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