2N4238

Single NPN bipolar junction transistor with 40V Vce, 1A Ic, and 1W power dissipation in a TO-39 through-hole package.

The 2N3439 is an NPN silicon transistor rated for 350V collector-emitter voltage and 1A collector current. It is housed in a TO-39 metal can package.

2N1711 is a NPN silicon bipolar junction transistor from Solid State Devices Inc. It features 75V collector-base breakdown voltage, 500mA collector current, and 0.8W power dissipation in a TO-39 through-hole package.

2N2405 is an NPN bipolar junction transistor from NTE Electronics rated for 90V collector-emitter voltage and 1A collector current in a TO-39 metal can package.