2N1711 2N1711 is a NPN silicon bipolar junction transistor from Solid State Devices Inc. It features 75V collector-base breakdown voltage, 500mA collector current, and 0.8W power dissipation in a TO-39 through-hole package.
Mfr Part #:

2N1711

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N1711 is a NPN silicon bipolar junction transistor from Solid State Devices Inc. It features 75V collector-base breakdown voltage, 500mA collector current, and 0.8W power dissipation in a TO-39 through-hole package.
Total Stock: 15,000 pcs

2N1711 Available from 1 distributor

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2N1711 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Current
Collector Emitter Breakdown Voltage (Minimum @ IC=30 mA)
Collector Emitter Breakdown Voltage (Minimum @ RBE=10Ω, IC=100 µA)
Collector-Base Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Lead Style
Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio
Military Grade
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation
Small-Signal Short-Circuit Forward-Current Transfer Ratio
Storage Temperature
Supplier Device Package
Switching Time (Ton, Toff)
Thermal Impedance
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N1711 Description

Short technical summary and product information.

The 2N1711 is a NPN silicon bipolar junction transistor manufactured by Solid State Devices Inc, qualified per MIL-PRF-19500/225. It offers a collector-base breakdown voltage of 75V minimum, collector-emitter breakdown voltages of 50V (RBE=10Ω) and 30V (open base), and an emitter-base breakdown voltage of 7V. The continuous collector current rating is 500mA, with a DC current gain (hFE) ranging from 100 to 300 at IC=150mA and VCE=10V. Collector-emitter saturation voltage is 1.5V maximum at IC=150mA and IB=15mA. The transistor has a total power dissipation of 0.8W at 25°C ambient temperature, derating linearly at 4.57mW/°C above 25°C. Thermal impedance is 58°C/W. Switching time (ton+toff) is 30µs. The device operates over a junction temperature range of -65°C to +200°C. It is packaged in a TO-205AD (TO-39-3 Metal Can) through-hole package, with a supplier device package of TO-39. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

2N1711 Quick Information

Product Type: NPN Bipolar Transistor
Series: 2N1711
Canonical Name: 2N1711 NPN Silicon Transistor
Subcategory: NPN Transistor

2N1711 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N1711 Features

  • NPN silicon bipolar junction transistor.
  • Rated for 75V collector-base voltage.
  • Supports 500mA continuous collector current.
  • 0.8W power dissipation capability.
  • Through-hole TO-39 metal can package.

2N1711 Applications

  • General purpose switching and amplification.
  • Suitable for low power driver circuits.
  • Used in military and aerospace applications.
  • Ideal for through-hole PCB designs.

2N1711 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-base breakdown voltage of the 2N1711?

75V minimum.

What package is the 2N1711 available in?

TO-205AD (TO-39-3 Metal Can) through-hole package.

What is the operating temperature range of the 2N1711?

-65°C to +200°C junction temperature.

Is the 2N1711 RoHS compliant?

RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the 2N1711?

100 to 300 at IC=150mA, VCE=10V.

What is the collector-emitter saturation voltage?

1.5V maximum at IC=150mA, IB=15mA.

What is the power dissipation of the 2N1711?

0.8W at 25°C ambient temperature.

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