| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3439 is a silicon epitaxial planar NPN transistor designed for high-voltage, low-current applications. It features a maximum collector-emitter voltage (VCEO) of 350V and a collector current rating of 1A, making it suitable for line-operated consumer and industrial equipment.
Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 20mA collector current and a transition frequency of 15MHz. The device has a maximum power dissipation of 1W at 50°C ambient temperature and 10W at 25°C case temperature.
The transistor is packaged in a TO-205AD (TO-39-3) metal can with through-hole mounting. It is designed for use as a driver in high-voltage inverters, switching regulators, and series regulator circuits.
The maximum collector-emitter voltage (VCEO) is 350V.
The maximum collector current is 1A.
The 2N3439 is available in a TO-205AD, TO-39-3 metal can package (TO-39).
The maximum operating junction temperature is 200°C.
The RoHS status is conflicting: internal data indicates RoHS3 compliant, but distributor data indicates non-RoHS. Verification is required.