| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N2405 is an NPN bipolar junction transistor manufactured by NTE Electronics. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical ratings include a collector-emitter voltage of 90 V, a collector current of 1 A, and a power dissipation of 1 W. The DC current gain (hFE) is a minimum of 60 at Ic=150 mA and Vce=10 V. The collector-emitter saturation voltage is a maximum of 500 mV at Ib=15 mA and Ic=150 mA.
The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting. It supports an operating junction temperature range of -65°C to 200°C.
The collector-emitter voltage (Vce) is rated at 90 V.
The maximum collector current (Ic) is 1 A.
The 2N2405 is available in a TO-205AD / TO-39-3 metal can package (through-hole mounting).
The operating junction temperature range is -65°C to 200°C.
The 2N2405 is listed as RoHS3 compliant, though this status is unverified and should be confirmed with the datasheet.
The minimum DC current gain (hFE) is 60 at Ic=150 mA and Vce=10 V.
The collector-emitter saturation voltage (Vce(sat)) is a maximum of 500 mV at Ib=15 mA and Ic=150 mA.